Comparison of the Electronic and Optical Properties of GaAsSb

EasyChair Preprint 14400

Abstract

Gallium Arsenide Antimonide (GaAsSb) is a notable III-V semiconductor alloy with diverse applications in optoelectronic and electronic devices due to its unique electronic and optical properties. This study presents a comparative analysis of the electronic and optical characteristics of GaAsSb, focusing on its band structure, electrical conductivity, and optical behavior, in comparison to its constituent materials, GaAs and GaSb.

In terms of electronic properties, GaAsSb exhibits a direct band gap that varies with composition, influencing its electrical conductivity and carrier dynamics. The effective mass of charge carriers in GaAsSb shows intermediate values between those of GaAs and GaSb, affecting mobility and device performance. The carrier lifetime in GaAsSb is also analyzed, revealing its implications for high-speed and high-efficiency applications.

Optically, GaAsSb demonstrates distinct absorption and photoluminescence characteristics due to its band structure, with absorption edges and emission spectra that differ from those of GaAs and GaSb. The study highlights the optical band gap variations and nonlinear optical properties, emphasizing GaAsSb's potential in photodetectors, light-emitting diodes, and laser technologies.

Keyphrases: Antimony, Doping, Hardness, material properties, nitrogen

@booklet{EasyChair:14400,
  author    = {John Owen},
  title     = {Comparison of the Electronic and Optical Properties of GaAsSb},
  howpublished = {EasyChair Preprint 14400},
  year      = {EasyChair, 2024}}