Optoelectronic Properties of GaAsSb/GaAs Nanowires

EasyChair Preprint 14383

Abstract

GaAsSb/GaAs nanowires have emerged as a promising material system for advanced optoelectronic applications due to their unique optoelectronic properties and the ability to engineer their band structure through compositional variations. This study provides a comprehensive analysis of the optoelectronic characteristics of GaAsSb/GaAs nanowires, focusing on their band structure, photoluminescence, optical absorption, and electrical transport properties. The incorporation of antimony (Sb) into the GaAs matrix enables significant tuning of the bandgap, leading to enhanced optical absorption and extended photoluminescence spectra, which are crucial for applications such as photodetectors, lasers, and solar cells. The effects of quantum confinement in nanowires are also explored, highlighting the impact on carrier mobility and device performance. Despite the promising properties, challenges related to material quality and scalability remain, and ongoing research is needed to address these issues. This review summarizes recent advancements and outlines future directions for optimizing GaAsSb/GaAs nanowires for next-generation optoelectronic devices.

Keyphrases: Bandgap Tuning, Optical absorption, Optoelectronic properties, Photoluminescence, quantum confinement

@booklet{EasyChair:14383,
  author    = {Samon Daniel},
  title     = {Optoelectronic Properties of GaAsSb/GaAs Nanowires},
  howpublished = {EasyChair Preprint 14383},
  year      = {EasyChair, 2024}}